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CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:Ni2Si, and Ni31Si12) on HfSiON.
- Source :
- IEEE Electron Device Letters; Dec2006, Vol. 27 Issue 12, p966-968, 3p, 4 Graphs
- Publication Year :
- 2006
-
Abstract
- The CMOS integration of dual work function (WF) phase-controlled Ni fully silicided (FUSI) gates on HfSiON was investigated. For the first time, the integration of NiSi FUSI gates on n-channel MOS (NMOS) and Ni<subscript>31</subscript>Si<subscript>12</subscript> FUSI gates on p-channel MOS (PMOS) with good V<subscript>t</subscript> control to short gate lengths (L<subscript>G</subscript> = 50 nm, linear V<subscript>t</subscript> of 0.49 V for NMOS, and -0.37 V for PMOS) is demonstrated. A poly-Si etch-back step was used to reduce the poly-Si height on PMOS devices, allowing for the linewidth-independent formation of NISi on NMOS and Ni-rich silicides on PMOS with a two-step rapid thermal processing (RTP) silicidation process. The process space for the scalable formation of NiSi on NMOS and Ni<subscript>2</subscript>Si or Ni<subscript>31</subscript>Si<subscript>12</subscript> on PMOS devices was investigated. It was found that within the process window for linewidth-independent NiSi FUSI formation on 100-nm poly-Si NMOS devices, it is possible to control the silicide formation on PMOS devices by adjusting the poly-Si etch-back and RTP1 conditions to obtain either Ni<subscript>2</subscript>Si or Ni<subscript>31</subscript>Si<subscript>12</subscript> FUSI gates. A reduction in the PMOS threshold voltage of 90 mV and improved device performance (18% I<subscript>on</subscript> improvement at I<subscript>off</subscript> = 100 nA/µm) was obtained for Ni<subscript>31</subscript>Si<subscript>12</subscript> compared to Ni<subscript>2</subscript>Si FUSI gates, as well as a V<subscript>t</subscript> reduction of 350 mV when compared to a single WF flow using NiSi FUSI gates on PMOS. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 27
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 23345617
- Full Text :
- https://doi.org/10.1109/LED.2006.886414