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Modeling of B diffusion in the presence of Ge.
- Source :
- Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2006, Vol. 24 Issue 1, p478-481, 4p, 5 Graphs
- Publication Year :
- 2006
-
Abstract
- In order to investigate the B and Ge interaction in silicon, an implant/anneal experiment is performed. The initial Si pre-amorphization step defines the amorphous layer depth and the end-of-range point defect distributions for all samples. The following Ge implant provides a low Ge content, thus minimizing the strain and the band gap narrowing effects on the diffusion of the subsequent B implant. The control sample received Si and B implants. The annealed profiles of the control samples show B profile broadening consistent with the transient enhanced diffusion. The B tail diffusion in the Ge implanted samples is almost identical to that of the control samples, indicating that Ge does not act as a trap for the BI pair. The GeB complex, suggested in literature, was used to explain the higher profile peak magnitude in Ge implanted samples. [ABSTRACT FROM AUTHOR]
- Subjects :
- BORON
GERMANIUM
SILICON
ANNEALING of metals
ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 10711023
- Volume :
- 24
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
- Publication Type :
- Academic Journal
- Accession number :
- 23078585
- Full Text :
- https://doi.org/10.1116/1.2151905