Radiative association of C and P, and Si and P atoms.

Authors :: Andreazza, C. M.
Marinho, E. P.
Singh, P. D.
Source :: Monthly Notices of the Royal Astronomical Society; 11/11/2006, Vol. 372 Issue 4, p1653-1656, 4p, 1 Chart, 2 Graphs
Publication Year :: 2006
Abstract: The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from to and from to for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature. [ABSTRACT FROM AUTHOR]