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Dopant activation in subamorphized silicon upon laser annealing.
- Source :
- Applied Physics Letters; 8/21/2006, Vol. 89 Issue 8, p082101, 3p, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- In this letter, the authors study the dopant activation and dopant distribution in a Si<superscript>+</superscript> subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si<superscript>+</superscript> preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region. [ABSTRACT FROM AUTHOR]
- Subjects :
- SILICON
BORON
FUSION (Phase transformation)
DIFFUSION
CRYSTALLOGRAPHY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 22256959
- Full Text :
- https://doi.org/10.1063/1.2335950