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Fabrication and Characterization of 3C-SiC-Based MOSFETs.

Authors :
A. Schöner
M. Krieger
G. Pensl
M. Abe
H. Nagasawa
Source :
Chemical Vapor Deposition; Sep2006, Vol. 12 Issue 8/9, p523-530, 8p
Publication Year :
2006

Details

Language :
English
ISSN :
09481907
Volume :
12
Issue :
8/9
Database :
Complementary Index
Journal :
Chemical Vapor Deposition
Publication Type :
Academic Journal
Accession number :
22229362

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