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Doubling of conductance steps in Si/SiO2 quantum point contact.
- Source :
- Journal of Applied Physics; 7/15/2006, Vol. 100 Issue 2, p024904, 4p, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- We have calculated the effect of the oxidation-induced strain on the ballistic conductance in a Si/SiO<subscript>2</subscript> quantum point contact. The strain-induced deformation potential was calculated semiempirically using a viscoelastic continuum model. The charge carriers are confined to the corners of the waveguide by both the strain-induced deformation potential and the Si/SiO<subscript>2</subscript> band edge discontinuity. As a consequence nearly degenerate symmetric and antisymmetric transverse states are formed for the Si [001] minima. This additional degeneracy within the Landauer-Büttiker formalism leads to doubling of conductance steps for electrons in the [001] minima which govern the conductance near the cutoff energy. Due to the additional strain-induced confinement, the effective channel width of the quantum point contact is smaller and therefore the conductance steps are sharper. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 100
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 21845688
- Full Text :
- https://doi.org/10.1063/1.2214212