Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method.

Authors :: Cheng, Zhenxiang
Kannan, Chinna Venkatasamy
Ozawa, Kiyoshi
Kimura, Hideo
Wang, Xiaolin
Source :: Applied Physics Letters; 7/17/2006, Vol. 89 Issue 3, p032901, 3p, 1 Black and White Photograph, 4 Graphs
Publication Year :: 2006
Abstract: Samarium doped bismuth titanate thin films with the composition of Bi<subscript>3.25</subscript>Sm<subscript>0.75</subscript>Ti<subscript>3</subscript>O<subscript>12</subscript> and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt/TiO<subscript>2</subscript>/SiO<subscript>2</subscript>/Si substrate by pulsed laser ablation. Measurements on Pt/BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2P<subscript>r</subscript>) of 5 μC/cm<superscript>2</superscript>, while the highly (117) oriented film showed a 2P<subscript>r</subscript> value of 54 μC/cm<superscript>2</superscript> at an electrical field of 268 kV/cm and a coercive field E<subscript>c</subscript> of 89 kV/cm. This is different from the sol-gel derived c-axis oriented Bi<subscript>3.15</subscript>Sm<subscript>0.85</subscript>Ti<subscript>3</subscript>O<subscript>12</subscript> film showing a 2P<subscript>r</subscript> value of 49 μC/cm<superscript>2</superscript>. [ABSTRACT FROM AUTHOR]

Subjects :: THIN films
BISMUTH compounds
FERROELECTRICITY
SEMICONDUCTOR doping
LASER ablation
CAPACITORS

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