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Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n+-GaAs Esaki diode.

Authors :
Kohda, M.
Kita, T.
Ohno, Y.
Matsukura, F.
Ohno, H.
Source :
Applied Physics Letters; 7/3/2006, Vol. 89 Issue 1, p012103, 3p, 3 Graphs
Publication Year :
2006

Abstract

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n<superscript>+</superscript>-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (P<subscript>EL</subscript>) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum P<subscript>EL</subscript> of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
89
Issue :
1
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
21602145
Full Text :
https://doi.org/10.1063/1.2219141