Effect of Thin Strain-Compensated Al0.6Ga0.4P Layers on the Growth of Multiple-Stacked InP/In0.5Al0.3Ga0.2P Quantum Dots.

Authors :: Zhang, X. B.
Ryou, J. H.
Dupuis, R. D.
He, L.
Hull, R.
Walter, G.
Holonyak Jr., N.
Source :: Journal of Electronic Materials; Apr2006, Vol. 35 Issue 4, p701, 1p
Publication Year :: 2006
Abstract: Multiple-stacked InP self-assembled quantum dots (SAQD or QD) were grown on an In<subscript>0.5</subscript>Al<subscript>0.3</subscript>Ga<subscript>0.2</subscript>P matrix lattice-matched on a GaAs (001) substrate using metalorganic chemical vapor deposition. Cathodoluminescence (CL) scanning electron microscopy, and transmission electron microscopy were employed to characterize the optical, morphological, and structural properties of the grown QDs. We found that the CL line width broadens and the surface becomes rough with an increase in the number of stacked QD layers in the structure. However, by introducing thin tensile-strained Al<subscript>0.6</subscript>Ga<subscript>0.4</subscript>P layers in the middle of In<subscript>0.5</subscript>Al<subscript>0.3</subscript>Ga<subscript>0.2</subscript>P spacer layers to compensate the compressive strain of the InP QD layers, the CL and morphology are significantly improved. Using this technique, 30-stacked InP/In<subscript>0.5</subscript>Al<subscript>0.3</subscript>Ga<subscript>0.2</subscript>P QD structures with improved CL properties and surface morphology were realized. [ABSTRACT FROM AUTHOR]

Subjects :: QUANTUM dots
MATRICES (Mathematics)
LATTICE theory
CHEMICAL vapor deposition
QUANTUM electronics

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