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Process Optimization for High Electron Mobility in nMOSFETs With Aggressively Scaled HfO2/Metal Stacks.
Process Optimization for High Electron Mobility in nMOSFETs With Aggressively Scaled HfO2/Metal Stacks.
- Source :
- IEEE Electron Device Letters; Jul2006, Vol. 27 Issue 7, p591-594, 4p, 4 Graphs
- Publication Year :
- 2006
-
Abstract
- The performance of aggressively scaled (1.4 nm < Tiny < 2.1 nm) self-aligned HfO<subscript>2</subscript>-based nMOSFETs with various metal gate electrodes (W, TaN, TiN, and TaSiN) is optimized. It is shown that high mobility values, competitive with oxynitride controls (SiON/poly-Si, T<subscript>inv</subscript> ∼ 1.8–2.1 nm), can be achieved. Detailed studies of the role of interface states, remote charges in the HfO<subscript>2</subscript> layer, interfacial layer regrowth, and nitrogen-induced charge lead to the conclusion that high-temperature-induced structural modifications near the SiO<subscript>2</subscript>/HfO<subscript>2</subscript> interface substantially improve the electron mobility. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 27
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21496836
- Full Text :
- https://doi.org/10.1109/LED.2006.876312