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The Effect of Deuterium Passivation at Different Steps of CMOS Processing on Lifetime...
- Source :
- IEEE Transactions on Electron Devices; Aug99, Vol. 46 Issue 8, p1812, 2p, 1 Chart, 2 Graphs
- Publication Year :
- 1999
-
Abstract
- Provides information on a study which investigated the effect of deuterium sintering for reliability lifetime improvement of complementary metal oxide semiconductors transistors with nitride sidewall spacers. Experimental framework of the study; Results and discussion; Conclusions.
- Subjects :
- DEUTERIUM
SINTERING
COMPLEMENTARY metal oxide semiconductors
PHYSIOLOGY
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 2119949
- Full Text :
- https://doi.org/10.1109/16.777177