Study of various strain energy distribution in InGaN/GaN multiple quantum wells.

The formation of In-rich quantum dot structures will induce strain energy in the quantum well layer, forming the clusters and stacking faults influencing the optical properties. Our results showed different QW widths with the formation of various In-rich quantum dot structures and different levels of strain energy. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. The results of temperature variations of PL spectral peak, integrated PL intensity and PL decay time showed consistent trends in varying strain energy distribution. [ABSTRACT FROM AUTHOR]