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Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy.
- Source :
- Journal of Materials Research; May2006, Vol. 21 Issue 5, p26-26, 1p
- Publication Year :
- 2006
-
Abstract
- To investigate the effect of plasma-incorporated fluorine on Si donors in pseudomorphic-high electron mobility transistors (P-HEMTs), we used x-ray photoemission spectroscopy to analyze three layers near the Si ä-doped layer and the Si ä-doped layer itself, in which we previously found fluorine accumulation after post-thermal annealing following fluorocarbon-based plasma exposure. For this evaluation, we developed controllable and low-speed AlGaAs wet-chemical etching using citric-acid-based wet etchant. We used it to expose one of the layers to be analyzed: one 7.5 nm above the Si ä-doped layer, one 1.5 nm above it, the ä-doped layer itself, and one 1.5 nm below it. We found that the accumulated fluorine localized in the ä-doped layer and reacted with Si donors. This is apparently the main reason for the carrier passivation in the fluorocarbon-based plasma-exposed P-HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08842914
- Volume :
- 21
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Materials Research
- Publication Type :
- Academic Journal
- Accession number :
- 20796029
- Full Text :
- https://doi.org/10.1557/jmr.2006.0159