ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition.

Authors :: Xu, W. Z.
Ye, Z. Z.
Zeng, Y. J.
Zhu, L. P.
Zhao, B. H.
Jiang, L.
Lu, J. G.
He, H. P.
Zhang, S. B.
Source :: Applied Physics Letters; 4/24/2006, Vol. 88 Issue 17, p173506, 3p, 1 Diagram, 3 Graphs
Publication Year :: 2006
Abstract: We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10<superscript>16</superscript>–10<superscript>17</superscript> cm<superscript>-3</superscript> and mobility of 1–10 cm<superscript>2</superscript> V<superscript>-1</superscript> s<superscript>-1</superscript>. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range. [ABSTRACT FROM AUTHOR]

Subjects :: LIGHT emitting diodes
SEMICONDUCTOR diodes
ELECTROLUMINESCENT devices
PLASMA effects in semiconductors
ZINC oxide thin films

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