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Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes.

Authors :
Woong Sang Jahng
Francis, Anthony H.
Hyunsik Moon
Nanos, John I.
Curtis, M. David
Source :
Applied Physics Letters; 2/27/2006, Vol. 88 Issue 9, p093504, 3p, 1 Diagram, 2 Graphs
Publication Year :
2006

Abstract

The charge generation properties at all interfaces of a p/n junction, bilayer photodiode have been investigated by means of the photoaction spectrum (PAS) as a function of applied bias. The organic photodiode was fabricated with a low-glass transition temperature (T<subscript>g</subscript>) polysiloxane with pendant hydrazone groups as the p-type material and a perylene diimide derivative as the n-type material. The PAS under short circuit and reverse bias showed an antibatic response at the high-energy region (3.0–3.5 eV), and a symbatic response at the low-energy region (2.0–3.0 eV). However, under forward bias, the PAS showed the opposite behavior. These results are interpreted in terms of the band structure of tin-doped indium oxide (ITO) that prevents effective photoinjection of electrons at the polymer/ITO interface and the relative energy levels of the constituent materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
88
Issue :
9
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
20064716
Full Text :
https://doi.org/10.1063/1.2180881