Interconnect Capacitance Characterization Using Charge-Injection-Induced Error-Free (CIEF) Charge-Based Capacitance Measurement (CBCM).

In this work, we describe a novel operation of charge-injection-induced error-free charge-based capacitance measurement (CLEF CBCM) method. This method has the simplest test structure among various CBCM methods by using only one N/PMOS pair. CLEF CBCM has the advantage of being free from charge-injection-induced errors and of efficient layout area usage. It is very suitable for industrial applications for large amounts of accurate capacitance characterizations with a limited layout area. Besides, CLEF CBCM is also implemented for investigating the impact of floating dummy metal fills on interconnect capacitance directly from silicon data. [ABSTRACT FROM AUTHOR]