Back to Search
Start Over
Low-Temperature Electron Mobility in Trigate SOI MOSFETs.
- Source :
- IEEE Electron Device Letters; Feb2006, Vol. 27 Issue 2, p120-122, 3p, 1 Diagram, 4 Graphs
- Publication Year :
- 2006
-
Abstract
- Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I<subscript>D</subscript>(V<subscript>G</subscript>) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm²/Vs, is measured in the subbands at T = 4.4 K. Subband mobility, decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 27
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 19552462
- Full Text :
- https://doi.org/10.1109/LED.2005.862691