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Work Function of Ni Silibide Phases on HfSiON and SiO2: NiSi, Ni2Si, Ni31Si12, and Ni3 Si Fully Silicided Gates.
- Source :
- IEEE Electron Device Letters; Jan2006, Vol. 27 Issue 1, p34-36, 3p, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- A complete determination of the effective work functions (WF) of NiSi Ni<subscript>2</subscript>Si, Ni<subscript>31</subscript>Si<subscript>12</subscript> and Ni<subscript>3</subscript>Si on HfSiON and on SiO<subscript>2</subscript> is presented. Conditions for formation of fully silicided (FUSI) gates for NiSi<subscript>2</subscript>, NiSi, Ni<subscript>3</subscript>Si<subscript>2</subscript>, Ni<subscript>2</subscript>Si, Ni<subscript>31</subscript>Si<subscript>12</subscript> and Ni<subscript>3</subscript>Si crystalline phases were identified. A double thickness series (HfSiON/SiO<subscript>2</subscript>) was used to extract WF on HfSiON accounting for charge effects. A strong effect on WF of Ni content is observed for HfSiON, with higher WF for the Ni-rich silicides suggesting unpinning of the Fermi level. A mild dependence is observed for SiO<subscript>2</subscript>. While all Ni-rich silicides have adequate WF for pMOS applications, Ni<subscript>2</subscript>Si is most attractive due to its low formation temperature, lower volume expansion and ease of integration. Similar threshold voltages (-0.3 V) were obtained on Ni<subscript>2</subscript>Si and Ni<subscript>31</subscript>Si<subscript>12</subscript> FUSI HfSiON pMOSFETS. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 27
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 19363013
- Full Text :
- https://doi.org/10.1109/LED.2005.861404