Gate-all-around MOSFETs: lateral ultra-narrow (≤10 nm) fin as channel body.

The fabrication of lateral ultra-narrow fin body (thickness ≤10 nm) gate-all-around MOSFETs, which exhibit excellent gate electrostatic control over the channel, is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects. [ABSTRACT FROM AUTHOR]