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A CMOS 110-dB @40-kS/s Programmable-Gain Chopper-Stabilized Third-Order 2-1 Cascade Sigma-Delta Modulator for Low-Power High-Linearity Automotive Sensor ASICs.

A CMOS 110-dB @40-kS/s Programmable-Gain Chopper-Stabilized Third-Order 2-1 Cascade Sigma-Delta Modulator for Low-Power High-Linearity Automotive Sensor ASICs.

Authors :
De Ia Rosa, José M.
Escalera, Sara
Pérez-Verdü, Belén
Medeiro, Fernando
Guerra, Oscar
Del Rio, Rocio
Rodrlguez-vázquez, Angel
Source :
IEEE Journal of Solid-State Circuits; Nov2005, Vol. 40 Issue 11, p2246-2264, 19p, 10 Diagrams, 8 Charts, 16 Graphs
Publication Year :
2005

Abstract

This paper describes a 0.35-pm CMOS chopper-stabilized switched-capacitor 2-1 cascade ΣΔ modulator for automotive sensor interfaces. The modulator architecture has been selected from an exhaustive comparison among multiple topologies in terms of resolution, speed and power dissipation. To obtain a better fitting with the characteristics of different sensor outputs, the circuit can be digitally programmed to yield four input-to-output gain values (x0.5, x1, x2, and x4) and has been designed to operate within the stringent environmental conditions of automotive electronics (temperature range of -40 ° to 175 °C). In order to relax the amplifier's dynamic requirements for the different modulator input-to-output gains, switchable capacitor arrays are used for all the capacitors in the first integrator. The design of the building blocks is based on a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12 MHz and the overall power consumption is 14.7 mW from a single 3.3-V supply and occupies 5.7 mm² silicon area. Experimental results show a maximum SNR of 87.3 dB within a 20-kHz signal bandwidth and 90.7 dB for 10-kHz signals, and an overall DR of 110 and 113.8 dB, respectively. These performance features place the reported circuit at the cutting edge of state-of-the-art high-resolution ΣΔ modulators. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189200
Volume :
40
Issue :
11
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
18803542
Full Text :
https://doi.org/10.1109/JSSC.2005.857356