Back to Search
Start Over
Low-frequency Raman scattering of Ge and Si nanocrystals in silica matrix.
- Source :
- Journal of Applied Physics; 9/15/2005, Vol. 98 Issue 6, p064303, 4p, 1 Black and White Photograph, 3 Graphs
- Publication Year :
- 2005
-
Abstract
- Ge and Si nanocrystals (nc-Ge and nc-Si) with average sizes in the range of 2–7 nm, embedded in silica matrix, were fabricated for investigating their acoustic-phonon vibrational properties. The freely elastic sphere theory was found to be unsuitable for explaining the low-frequency phonon vibration character of both nc-Ge and nc-Si in our current experiments. We have assigned the observed low-frequency Raman peaks to “LA-like mode” and “TA-like mode” in terms of their polarization and depolarization behaviors. In addition, it is revealed that the lattice contraction phenomenon exists in nc-Ge and nc-Si with sizes smaller than 4 nm, which leads to a contrary effect against matrix traction on the phonon vibrational frequencies. [ABSTRACT FROM AUTHOR]
- Subjects :
- RAMAN effect
NANOCRYSTALS
SILICON
GERMANIUM
SILICA
LIGHT scattering
PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 18454723
- Full Text :
- https://doi.org/10.1063/1.2035312