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Low-frequency Raman scattering of Ge and Si nanocrystals in silica matrix.

Authors :
Yang, Y. M.
Wu, X. L.
Yang, L. W.
Huang, G. S.
Siu, G. G.
Chu, Paul K.
Source :
Journal of Applied Physics; 9/15/2005, Vol. 98 Issue 6, p064303, 4p, 1 Black and White Photograph, 3 Graphs
Publication Year :
2005

Abstract

Ge and Si nanocrystals (nc-Ge and nc-Si) with average sizes in the range of 2–7 nm, embedded in silica matrix, were fabricated for investigating their acoustic-phonon vibrational properties. The freely elastic sphere theory was found to be unsuitable for explaining the low-frequency phonon vibration character of both nc-Ge and nc-Si in our current experiments. We have assigned the observed low-frequency Raman peaks to “LA-like mode” and “TA-like mode” in terms of their polarization and depolarization behaviors. In addition, it is revealed that the lattice contraction phenomenon exists in nc-Ge and nc-Si with sizes smaller than 4 nm, which leads to a contrary effect against matrix traction on the phonon vibrational frequencies. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
98
Issue :
6
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
18454723
Full Text :
https://doi.org/10.1063/1.2035312