New tri-state switch (TSS) using AlGaAs/GaAs/InGaAs double heterostructure.

A new AlGaAs/GaAs/InGaAs heteroconfinement tri-state switch (TSS) prepared by metal organic chemical vapor deposition has been fabricated and demonstrated. This TSS exhibits the interesting multiple negative differential resistance (MNDR) characteristics. The NDR behavior is caused by a p + n junction and sequential two-stage barrier-lowering and potential-redistribution effect that resulted from the electron confinement at AlGaAs/GaAs/InGaAs heterointerface and lnGaAs quantum well, respectively. [ABSTRACT FROM AUTHOR]