A study of transparent contact to vertical GaN-based light-emitting diodes.

Authors :: Kim, D. W.
Lee, H. Y.
Yeom, G. Y.
Sung, Y. J.
Source :: Journal of Applied Physics; 9/1/2005, Vol. 98 Issue 5, p053102, 4p, 1 Diagram, 2 Graphs
Publication Year :: 2005
Abstract: In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78×10<superscript>-4</superscript> Ω cm and the measured optical transmittance at 460 nm was 96.8% after the annealing process. In this condition, about 1×10<superscript>-5</superscript> Ω cm<superscript>2</superscript> of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained. [ABSTRACT FROM AUTHOR]