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High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials.
- Source :
- Nature Electronics; Jan2025, Vol. 8 Issue 1, p24-35, 12p
- Publication Year :
- 2025
Details
- Language :
- English
- ISSN :
- 25201131
- Volume :
- 8
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nature Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 182537380
- Full Text :
- https://doi.org/10.1038/s41928-024-01265-2