Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity.

MLA

Li, Wenxin, et al. “Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity.” Applied Physics Letters, vol. 125, no. 23, Dec. 2024, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0227700.

APA

Li, W., Wang, Y., Gu, G., Ren, F., Zhou, D., Xu, W., Zhou, F., Chen, D., Zhang, R., Zheng, Y., & Lu, H. (2024). Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity. Applied Physics Letters, 125(23), 1–6. https://doi.org/10.1063/5.0227700

Chicago

Li, Wenxin, Yifu Wang, Guangyang Gu, Fangfang Ren, Dong Zhou, Weizong Xu, Feng Zhou, et al. 2024. “Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity.” Applied Physics Letters 125 (23): 1–6. doi:10.1063/5.0227700.