Trimethylboron as a precursor for boron phosphide plasma deposition at low temperature.

Boron phosphide (BP) thin films are potential selective contact layers for photovoltaic (PV) devices. However, lower deposition temperatures are preferred in the fabrication of many PV devices, such as solar cells, to reduce their cost. Here, boron phosphide layers were grown on silicon (100) substrates using the standard plasma-enhanced chemical vapor deposition (PECVD) and time-modulated PECVD methods with trimethylboron [B(CH₃)₃, TMB] and phosphine precursors. The effect of plasma power and Ar addition on structural properties and chemical composition is investigated, while material properties are analyzed by transmission electron microscopy. Chemical characterization by the electron diffraction x-ray spectroscopy method showed high carbon content in the BP layer. Electron energy loss spectroscopy demonstrated almost stoichiometric B and P (1:1) content. Raman spectroscopy of annealed samples showed an increase in carbon-related peaks, therefore indicating that annealing does not lead to the crystallization of boron phosphide. Thus, using TMB as a precursor of boron leads to carbon contamination in both standard and time-modulated modes. Optical emission spectroscopy showed that the low-temperature growth of BP without plasma (Ar or phosphine) assistance using TMB is impossible. We conclude that there is a need to investigate other boron precursors for boron phosphide low-temperature growth to avoid carbon contamination in BP films. [ABSTRACT FROM AUTHOR]