Back to Search
Start Over
Incorporation of a second CsPbl3−yIy perovskite absorber layer (y = 1, 2, or 3) into CsPbl3-based perovskite solar cells, to improve their thermal stability and performance.
- Source :
- Optical & Quantum Electronics; Dec2024, Vol. 56 Issue 12, p1-21, 21p
- Publication Year :
- 2024
-
Abstract
- This article introduces a novel design approach for perovskite solar cells utilizing a CsPbI<subscript>3</subscript> absorber layer to achieve high efficiency while keeping manufacturing costs low. The proposed perovskite cell configuration includes a CsPbI<subscript>3</subscript> absorber layer, CdTe layer (HTL), IGZO layer (ETL), and fluorine-doped tin oxide (FTO) layer. Through the utilization of SCAPS-1D software, a comprehensive investigation was carried out to analyze the impact of various parameters such as temperature, doping concentration, bandgap energy, resistances (shunt and series), and wavelengths on the device's performance. Furthermore, an effective approach was implemented to boost efficiency by incorporating a secondary perovskite absorber layer CsPbCl<subscript>3−y</subscript>I<subscript>y</subscript> (y = 1, 2, or 3) into the CsPbI<subscript>3</subscript>-based solar cell structure. These additional CsPbCl<subscript>3−y</subscript>I<subscript>y</subscript> (y = 1, 2, or 3) layers aid in minimizing recombination losses, improving optical properties, and addressing the V<subscript>oc</subscript> deficit. The study revealed that integrating a second perovskite layer CsPbCl<subscript>3−y</subscript>I<subscript>y</subscript> (y = 1, 2, or 3) enhanced the efficiency of the FTO/IGZO/CsPbI<subscript>3</subscript>/CdTe solar cell from 27.20 to 31.75%. [ABSTRACT FROM AUTHOR]
- Subjects :
- SOLAR cells
TIN oxides
DOPING agents (Chemistry)
PEROVSKITE
THERMAL stability
Subjects
Details
- Language :
- English
- ISSN :
- 03068919
- Volume :
- 56
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Optical & Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 181968978
- Full Text :
- https://doi.org/10.1007/s11082-024-07811-8