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Ho doping-induced ferroelectric polarization enhances UV photodetector performance of YbMnO3.

Authors :
Shan, Zhang
Xin, Song
Xing, Gao
Chunxiao, Lu
Pei, Han
Yunying, Liu
Xiaowei, Li
Junyan, Zhang
Yong, Li
Source :
Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 1, p1-8, 8p
Publication Year :
2025

Abstract

The ferroelectric photovoltaic (PE-PV) effect has been extensively explored and plays a crucial role in constructing self-powered photodetectors. Ferroelectric materials have been attracting great interest in self-powered ultraviolet (UV) photodetectors due to their polarization-induced photovoltaic effect. In this paper, the ultraviolet self-powered photodetection properties of polycrystalline rare-earth Yb<subscript>1-x</subscript>Ho<subscript>x</subscript>MnO<subscript>3</subscript> (0 ≤ x ≤ 0.08, Δx = 0.02) ferroelectric materials have been investigated. The substitution of Ho atoms for Mn atoms has a great influence on the ferroelectric polarization, and Ho doping increases the photocurrent density. The photodetectors show excellent reproducibility responsivity (R) and detectivity (D*) under illumination at 365 nm. In addition, at the light density of 1 mW/cm<superscript>2</superscript>, the responsivity and detectivity of the photodetectors are as high as 0.09 W/A and 3.359 × 10<superscript>11</superscript> Jones, respectively. These outstanding photodetection performances are due to the relatively high short-circuit current density (J<subscript>sc</subscript>). High J<subscript>sc</subscript> implies that more photogenerated carriers can be produced under illumination, which makes the device more sensitive to optical signals. This study presents a feasible method for improving the light-detection performance of the ultraviolet self-powered detector. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
36
Issue :
1
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
181966812
Full Text :
https://doi.org/10.1007/s10854-024-14094-y