Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors.

MLA

Liu, Jun, et al. “Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors.” Micromachines, vol. 15, no. 12, Dec. 2024, p. 1465. EBSCOhost, https://doi.org/10.3390/mi15121465.

APA

Liu, J., Xiong, X., Li, H., Huang, X., Wang, Y., Sheng, Y., Liang, Z., Yao, R., Ning, H., & Wei, X. (2024). Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors. Micromachines, 15(12), 1465. https://doi.org/10.3390/mi15121465

Chicago

Liu, Jun, Xin Xiong, Han Li, Xiangchen Huang, Yajun Wang, Yifa Sheng, Zhihao Liang, Rihui Yao, Honglong Ning, and Xiaoqin Wei. 2024. “Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors.” Micromachines 15 (12): 1465. doi:10.3390/mi15121465.