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The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.

The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.

Authors :
Liu, Dawei
Wang, Rui
Jia, Chengyu
Wang, Dingwei
Zhao, Zhiguo
Pan, Jiaqi
Shi, Lei
Source :
Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 36, p1-13, 13p
Publication Year :
2024

Abstract

The transparent device in ultrathin NiO layer modified CuI/InGaZnO<subscript>4</subscript> pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO<subscript>4</subscript> exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 10<superscript>3</superscript>-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu<superscript>+</superscript>/Cu<superscript>2+</superscript>, Ni<superscript>2+</superscript>/Ni<superscript>3+</superscript>-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
36
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
181900040
Full Text :
https://doi.org/10.1007/s10854-024-14029-7