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The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.
The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.
- Source :
- Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 36, p1-13, 13p
- Publication Year :
- 2024
-
Abstract
- The transparent device in ultrathin NiO layer modified CuI/InGaZnO<subscript>4</subscript> pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO<subscript>4</subscript> exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 10<superscript>3</superscript>-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu<superscript>+</superscript>/Cu<superscript>2+</superscript>, Ni<superscript>2+</superscript>/Ni<superscript>3+</superscript>-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 36
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 181900040
- Full Text :
- https://doi.org/10.1007/s10854-024-14029-7