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Structural Evolution, Piezoelectric and Ferroelectric Properties of (1−x)Bi4Ti3O12-xCaBi2Nb2O9 High-Temperature Composite Ceramics: Structural Evolution and Piezoelectric and Ferroelectric...: Z. Zhang et al

Authors :
Zhang, Zhipeng
Shen, Zong-Yang
Wang, Zhumei
Zeng, Tao
Luo, Wenqin
Song, Fusheng
Li, Yueming
Source :
Journal of Electronic Materials; Jan2025, Vol. 54 Issue 1, p370-377, 8p
Publication Year :
2025

Abstract

High leakage current density and relatively low piezoelectric activity have become one of the main obstacles to expanding the practical application of Bi<subscript>4</subscript>Ti<subscript>3</subscript>O<subscript>12</subscript> (BIT) high-temperature piezoelectric ceramics. Although ion doping can improve electrical resistivity and piezoelectric response, it often lowers the Curie temperature. In this work, by introducing CaBi<subscript>2</subscript>Nb<subscript>2</subscript>O<subscript>9</subscript> (CBN) with higher Curie temperature to BIT, a composite ceramic (1−x)BIT-xCBN was designed, and the effect of CBN content on the structure and electrical properties of the ceramics was investigated. With the increase in the x value, the intensity of the highest peak (117) gradually decreased until disappearing, while the intensity of peak (115) gradually increased, and the X-ray diffraction (XRD) refinement results showed that some non-stoichiometric compounds, Bi<subscript>1.74</subscript>Ti<subscript>2</subscript>O<subscript>6.624</subscript> and Ca<subscript>0.5</subscript>Bi<subscript>2.5</subscript>Ti<subscript>0.5</subscript>Nb<subscript>1.5</subscript>O<subscript>9</subscript>, were produced. The sheet-like grains were effectively suppressed, while the granular grains became prominent with high CBN doping content, which should contribute to improving the electrical resistivity of ceramics. The optimal electrical properties were obtained in 0.8BIT-0.2CBN composite ceramics as follows: the piezoelectric coefficient d<subscript>33</subscript> = 13.8 pC/N, the Curie temperature T<subscript>C</subscript> = 765°C, and the electrical resistivity ρ<subscript>dc</subscript> = 8.52 × 10<superscript>5</superscript> Ω·cm (@ 500°C). In addition, the d<subscript>33</subscript> maintained 89.1% of the initial value after annealing at 550°C, showing good thermal stability for high-temperature sensing applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
54
Issue :
1
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
181826214
Full Text :
https://doi.org/10.1007/s11664-024-11527-6