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Enhanced dielectric properties of Mg4Nb2O9 ceramic by Ti substitution.

Authors :
Wang, Zheng
Ma, Juncheng
Xiong, Zhe
Yang, Hongyu
Zhang, Xing
Tang, Bin
Source :
Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 36, p1-12, 12p
Publication Year :
2024

Abstract

In this paper, the strategy of substituting Ti<superscript>4+</superscript> for Nb<superscript>5+</superscript> in Mg<subscript>4</subscript>Nb<subscript>2</subscript>O<subscript>9</subscript> microwave dielectric ceramic was employed to improve the microwave dielectric properties. Specifically, a maximum Q × f value of 137,462 GHz was obtained at x = 0.15, resulting in a nearly 30% increase in the quality factor (Q × f) for the Mg<subscript>4</subscript>Nb<subscript>2−x</subscript>Ti<subscript>x</subscript>O<subscript>9−x/2</subscript> sample. Moreover, we investigated the phase composition, micromorphology, and the relationship between structural characterization and dielectric properties. The X-ray diffraction (XRD) patterns indicated that only a single Mg<subscript>4</subscript>Nb<subscript>2</subscript>O<subscript>9</subscript> phase with a trigonal corundum-type structure was formed in all the samples. The ɛ<subscript>r</subscript> was related to the ionic polarizability, and the τ<subscript>f</subscript> value was dependent on the B–O bond valence (V<subscript>B–O</subscript>) and BO<subscript>6</subscript> octahedral distortions. Ultimately, the Mg<subscript>4</subscript>Nb<subscript>1.85</subscript>Ti<subscript>0.15</subscript>O<subscript>8.925</subscript> ceramic sample exhibited microwave dielectric properties with ɛ<subscript>r</subscript> = 13.89, Q × f = 137,462 GHz, and τ<subscript>f</subscript> = − 55.1 ppm/°C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
36
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
181605513
Full Text :
https://doi.org/10.1007/s10854-024-14047-5