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Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications.
- Source :
- Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 34, p1-22, 22p
- Publication Year :
- 2024
-
Abstract
- Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO<subscript>6</subscript> (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A<subscript>m-1</subscript>B<subscript>m</subscript>O<subscript>3m</subscript>, m = 5, while Rietveld analysis and tolerance factor (τ ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 34
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 181536063
- Full Text :
- https://doi.org/10.1007/s10854-024-13867-9