Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration.

MLA

Zhu, Zheng-Xu, et al. “Three Types of Resistive Switching in Ferroelectric Hf0.5Zr0.5O2 Films Mediated by Polarization Reversal and Oxygen Vacancy Migration.” Rare Metals, vol. 43, no. 12, Dec. 2024, pp. 6765–70. EBSCOhost, https://doi.org/10.1007/s12598-024-02920-5.

APA

Zhu, Z.-X., Zhao, H.-Y., Wang, H., Wang, Z.-J., Li, J.-C., Shen, S.-C., & Yin, Y.-W. (2024). Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration. Rare Metals, 43(12), 6765–6770. https://doi.org/10.1007/s12598-024-02920-5

Chicago

Zhu, Zheng-Xu, Hao-Yu Zhao, He Wang, Zi-Jian Wang, Jia-Chen Li, Sheng-Chun Shen, and Yue-Wei Yin. 2024. “Three Types of Resistive Switching in Ferroelectric Hf0.5Zr0.5O2 Films Mediated by Polarization Reversal and Oxygen Vacancy Migration.” Rare Metals 43 (12): 6765–70. doi:10.1007/s12598-024-02920-5.