High κ and large positive τf in the low temperature sintering BaNb2V2O11 ceramics.

The BaNb₂V₂O₁₁ microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb₂V₂O₁₁ phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm⁻¹ and the Q × f value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity (ε_r) of 88.7, a high Q × f value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency (τ_f) of + 602.4 ppm/°C. This notably large positive τ_f value makes it an effective τ_f compensator. Furthermore, the high ε_r value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations. [ABSTRACT FROM AUTHOR]