Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.

Authors :: Sun, H. D.
Clark, A. H.
Calvez, S.
Dawson, M. D.
Shih, D. K.
Lin, H. H.
Source :: Applied Physics Letters; 8/22/2005, Vol. 87 Issue 8, p081908, 3p, 3 Graphs
Publication Year :: 2005
Abstract: We report the temperature-dependent photoluminescence characterization of InN<subscript>x</subscript>As<subscript>1-x</subscript>/In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. [ABSTRACT FROM AUTHOR]

Subjects :: QUANTUM wells
PHOTOLUMINESCENCE
OPTICS
INDIUM phosphide
GALLIUM compounds
NITROGEN

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