A. Simple and Low-Cost Method to Fabricate TFTs With Poly-Si Nanowire Channel.

Authors :: Lin, H.-C.
Lee, M.-H.
Su, C.-J.
Huang, T.-Y.
Lee, C. C.
Yang, Y.-S.
Source :: IEEE Electron Device Letters; Sep2005, Vol. 26 Issue 9, p643-645, 3p, 7 Diagrams, 2 Graphs
Publication Year :: 2005
Abstract: A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter. [ABSTRACT FROM AUTHOR]