Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures.

Effects of the ultrathin 1 nm thick AlGaN regrown layer before gate insulator deposition on the performance of ZrO2/AlGaN/GaN metal‐insulator‐semiconductor (MIS) structures are investigated. In comparison with the reference ZrO2/AlGaN/GaN MIS high‐electron‐mobility transistors (MIS‐HEMTs), MIS‐HEMTs with AlGaN regrown layer exhibit increased maximum drain current (>1050 mA mm−1) and broader full‐width at half maximum (FWHM) of transconductance profile (11 V). Moreover, the gate leakage current in the forward direction is reduced by about four orders of magnitude while the hysteresis of the transfer curves is cut‐down to more than 40%. Compared with the control MIS‐capacitors (MIS‐caps), MIS‐caps with regrowth show highly evident sudden increase in capacitance known as "spill‐over" in the capacitance–voltage (C–V) profiles, suggesting improved ZrO2/AlGaN interfaces. Extracted electron states from the C–V profiles, reveal 6 times to 14 times reduction of interface states density within 0.2 to 0.8 eV from the AlGaN conduction band edge. Using photo‐assisted C–V measurements, the near mid‐gap electron states density of MIS‐caps is extracted with regrowth to be at least three times less than those of reference MIS‐caps. Findings in this work are very similar to those recently reported Al2O3/regrown‐AlGaN interfaces, suggesting that the regrowth technique could be universal in reducing electron states along insulator/AlGaN interfaces. [ABSTRACT FROM AUTHOR]