The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors.

MLA

Kim, Junhyung, et al. “The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors.” Electronics (2079-9292), vol. 13, no. 20, Oct. 2024, p. 4038. EBSCOhost, https://doi.org/10.3390/electronics13204038.

APA

Kim, J., Lee, G., Cho, K., Park, J. Y., Min, B.-G., Jeong, J., Ji, H.-G., Chang, W., Lee, J.-M., & Kang, D.-M. (2024). The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors. Electronics (2079-9292), 13(20), 4038. https://doi.org/10.3390/electronics13204038

Chicago

Kim, Junhyung, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, and Dong-Min Kang. 2024. “The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors.” Electronics (2079-9292) 13 (20): 4038. doi:10.3390/electronics13204038.