Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy.

MLA

Jiang, Yu-Sen, et al. “Robust Energy Storage Density and Negative Capacitance in Antiferroelectric Heterostructures Grown by Atomic Layer Epitaxy.” Journal of Materials Chemistry A, vol. 12, no. 41, Nov. 2024, pp. 28211–23. EBSCOhost, https://doi.org/10.1039/d4ta04610b.

APA

Jiang, Y.-S., Chao, Y.-H., Shiojiri, M., Yin, Y.-T., & Chen, M.-J. (2024). Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy. Journal of Materials Chemistry A, 12(41), 28211–28223. https://doi.org/10.1039/d4ta04610b

Chicago

Jiang, Yu-Sen, Yi-Hsuan Chao, Makoto Shiojiri, Yu-Tung Yin, and Miin-Jang Chen. 2024. “Robust Energy Storage Density and Negative Capacitance in Antiferroelectric Heterostructures Grown by Atomic Layer Epitaxy.” Journal of Materials Chemistry A 12 (41): 28211–23. doi:10.1039/d4ta04610b.