Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InGaN/GaN Multiple Quantum Wells.

By numerically solving the self-consistent system of the Schrödinger equations and Poisson electroneutrality, zone diagrams of LED heterostructures with In Ga N/GaN multiple quantum wells have been calculated. The effect of electron–phonon interaction, nonparabolicity of the dispersion relation, and hybridization of the wave function on the values of the effective mass of major charge carriers in the In Ga N/GaN quantum wells has been studied. The long-wave shift of 2D-plasmon resonances is associated with the temperature renormalization of the effective mass of two-dimensional carriers. To describe the temperature dependence of the effective mass, the function for the displacement of the 2D-plasmon resonance frequency is introduced. [ABSTRACT FROM AUTHOR]