Erratum: Assessment of 180 nm double SOI technology for analog front-end design with back-gate voltage.

Details

Language :

English

ISSN :

17480221

Volume :

19

Issue :

10

Database :

Complementary Index

Journal :

Journal of Instrumentation

Publication Type :

Academic Journal

Accession number :

180117233

Full Text :

https://doi.org/10.1088/1748-0221/19/10/E10001