InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer.

High-performance p-B-n infrared photodetectors based on In 0.53 Ga 0.47 As / Ga 0.51 As 0.49 Sb type-II superlattices with an Al 0.85 Ga 0.15 AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼ 2.1 μm and ∼ 2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D^*) of 4.12 × 10 10 cm · Hz 1 / 2 / W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K. [ABSTRACT FROM AUTHOR]