Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations.

MLA

Joh, Hongrae, et al. “Dual-Port Ferroelectric NAND Flash Memory for Large Memory Window, QLC Programmable and Disturbance-Free Operations.” Journal of Materials Chemistry C, vol. 12, no. 38, Oct. 2024, pp. 15435–43. EBSCOhost, https://doi.org/10.1039/d4tc02210f.

APA

Joh, H., Lee, S., Ahn, J., & Jeon, S. (2024). Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations. Journal of Materials Chemistry C, 12(38), 15435–15443. https://doi.org/10.1039/d4tc02210f

Chicago

Joh, Hongrae, Sangho Lee, Jinho Ahn, and Sanghun Jeon. 2024. “Dual-Port Ferroelectric NAND Flash Memory for Large Memory Window, QLC Programmable and Disturbance-Free Operations.” Journal of Materials Chemistry C 12 (38): 15435–43. doi:10.1039/d4tc02210f.