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Pressure-induced structural transition and superconductivity in hard compound IrB4.

Authors :
Song, Ting
Chen, Meng-Ru
Peng, Hai-Jun
Li, Wei-Wei
Dou, Xi-Long
Sun, Xiao-Wei
Source :
Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-8, 8p
Publication Year :
2024

Abstract

The recent discovery of MoB<subscript>2</subscript> with a superconducting transition temperature (T<subscript>c</subscript>) of up to 32 K at 100 GPa provides new insights into the metallization and subsequently high-T<subscript>c</subscript> superconductivity of diborides, highlighting the potential of transition metals in these compounds. We herein re-evaluated the structure, mechanical, and superconducting properties of IrB<subscript>4</subscript> under pressure up to 300 GPa using first-principles. Our calculations reveal that a new P2<subscript>1</subscript>/c phase exhibiting a hardness of 15.75 GPa surpasses the stability of the C2/m structure identified through the particle swarm optimization at ambient pressure. Upon compressing, the P2<subscript>1</subscript>/c phase transforms into an MgB<subscript>2</subscript>-type structure with a space group of P6<subscript>3</subscript>/mmc at 62.5 GPa and then into the orthorhombic Cmca phase above 109 GPa. Unlike semiconductor behavior of the atmospheric pressure phase, the two high-pressure structures are metallic and superconducting, with T<subscript>c</subscript> values of 29.90 for P6<subscript>3</subscript>/mmc at 62.5 GPa and 13.45 K for Cmca at 125 GPa. Analysis of the electronic structure and electron–phonon coupling (EPC) reveals that the high T<subscript>c</subscript>, similar to MgB<subscript>2</subscript>-type MoB<subscript>2</subscript>, stems from the Van Hove Singularities (VHS) near the Fermi level donated by transition metal Ir. The effect further enhances the EPC based on the boron contribution. More interestingly, pressure has little impacts on the position of the VHS. These findings provide a new platform for designing advanced high-T<subscript>c</subscript> superconductors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
136
Issue :
12
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
180003204
Full Text :
https://doi.org/10.1063/5.0227331