Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs.

MLA

Hong, Woonggi, et al. “Suppression of Surface Optical Phonon Scattering by AlN Interfacial Layers for Mobility Enhancement in MoS2 FETs.” Nanoscale, vol. 16, no. 35, Sept. 2024, pp. 16602–10. EBSCOhost, https://doi.org/10.1039/d4nr01231c.

APA

Hong, W., Shim, G. W., Jin, H. J., Park, H., Kang, M., Yang, S. Y., & Choi, S.-Y. (2024). Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs. Nanoscale, 16(35), 16602–16610. https://doi.org/10.1039/d4nr01231c

Chicago

Hong, Woonggi, Gi Woong Shim, Hyeok Jun Jin, Hamin Park, Mingu Kang, Sang Yoon Yang, and Sung-Yool Choi. 2024. “Suppression of Surface Optical Phonon Scattering by AlN Interfacial Layers for Mobility Enhancement in MoS2 FETs.” Nanoscale 16 (35): 16602–10. doi:10.1039/d4nr01231c.