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Ion-sensitive field effect transistor biosensors for biomarker detection: current progress and challenges.
- Source :
- Journal of Materials Chemistry B; 9/21/2024, Vol. 12 Issue 35, p8523-8542, 20p
- Publication Year :
- 2024
-
Abstract
- The ion-sensitive field effect transistor (ISFET) has emerged as a crucial sensor device, owing to its numerous benefits such as label-free operation, miniaturization, high sensitivity, and rapid response time. Currently, ISFET technology excels in detecting ions, nucleic acids, proteins, and cellular components, with widespread applications in early disease screening, condition monitoring, and drug analysis. Recent advancements in sensing techniques, coupled with breakthroughs in nanomaterials and microelectronics, have significantly improved sensor performance. These developments are steering ISFETs toward a promising future characterized by enhanced sensitivity, seamless integration, and multifaceted detection capabilities. This review explores the structure and operational principles of ISFETs, highlighting recent research in ISFET biosensors for biomarker detection. It also examines the limitations of these sensors, proposes potential solutions, and anticipates their future trajectory. This review aims to provide a valuable reference for advancing ISFETs in the field of biomarker measurement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2050750X
- Volume :
- 12
- Issue :
- 35
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry B
- Publication Type :
- Academic Journal
- Accession number :
- 179575373
- Full Text :
- https://doi.org/10.1039/d4tb00719k