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Dielectric properties and impedance spectroscopic study of (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 ceramics
- Source :
- Journal of Materials Science: Materials in Electronics; Sep2024, Vol. 35 Issue 26, p1-13, 13p
- Publication Year :
- 2024
-
Abstract
- The solid-state reaction method was employed to synthesize (1−x)[0.90NaNbO<subscript>3</subscript>–0.10Bi(Mg<subscript>0.5</subscript>Ta<subscript>0.5</subscript>)O<subscript>3</subscript>]–x(Bi<subscript>0.5</subscript>Na<subscript>0.5</subscript>)<subscript>0.7</subscript>(Sr<subscript>0.7</subscript>La<subscript>0.2</subscript>)<subscript>0.3</subscript>Ti<subscript>0.9</subscript>Zr<subscript>0.1</subscript>O<subscript>3</subscript>, denoted as (1−x)(NN–BMT)–xBNSLTZ (xBNSLTZ). XRD analysis of xBNSLTZ confirmed that all samples possessed a pure perovskite structure. SEM micrographs demonstrated homogeneous grain distribution and minimal porosity. With an increasing concentration of BNSLTZ, there was a gradual reduction in average grain size. Impedance spectroscopy was utilized to investigate the electrical properties of xBNSLTZ across a frequency sweep of 10 Hz–1 MHz and over a temperature range of 420–560 °C. The complex impedance and modulus spectra reveal non-Debye-type dielectric relaxation, indicative of two contributing mechanisms: grain and grain boundary effects on conduction. Electric modulus analysis indicated that the low-frequency relaxation process was temperature independent. The dc conductivity variation with temperature follows the Arrhenius equation. The ac conductivity was found to adhere to Jonscher power law. The E<subscript>a</subscript> (the relaxation activation energy) and E<subscript>c</subscript> (conductance activation energy) confirmed the relaxation mechanism of 0.3BNSLTZ is dipolar conduction. The dielectric properties showed a significant dependence on both frequency and temperature. A dielectric anomaly pointed to the presence of a single relaxation behavior. It was observed that an increase in BNSLTZ concentration led to a decrease in the maximum dielectric constant. Optimum performance was obtained with the 0.3BNSLTZ ceramics, which has the smallest average grain size (1.54 μm), considerable resistance value (R ~ 1000 K Ω c m ), and moderate dielectric constant (ε<subscript>r</subscript> ~ 600), superior to the pure NN-BMT ceramic. These results demonstrate that the electrical property of the xBNSLTZ ceramics have some potential value in the application of electrical materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 179574677
- Full Text :
- https://doi.org/10.1007/s10854-024-13474-8