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Influence of Partial Substitution of Sn by Si on the Electrical, Mechanical, and Magnetic Properties of Ni44Mn44Sn12 Heusler Alloys.

Authors :
Lima, Ariely V. B.
da Silva, Debóra Moura
Mélo, Adelaide C.
dos Passos, Tibério Andrade
Torquato, Ramon Alves
de Oliveira, Danniel Ferreira
Source :
Journal of Electronic Materials; Oct2024, Vol. 53 Issue 10, p6322-6332, 11p
Publication Year :
2024

Abstract

The effect of substituting Sn with a fourth element on the functional properties of Heusler NiMnSn alloys has been reported in the literature. In the present work, the influence of the addition of Si to the Heusler NiMnSn system was evaluated, where Ni<subscript>44</subscript>Mn<subscript>44</subscript>Sn<subscript>12</subscript> (at.%), Ni<subscript>44</subscript>Mn<subscript>44</subscript>Sn<subscript>10.5</subscript>Si<subscript>1.5</subscript> (at.%) and Ni<subscript>44</subscript>Mn<subscript>44</subscript>Sn<subscript>9</subscript>Si<subscript>3</subscript> (at.%) alloys were prepared in an induction furnace without a controlled atmosphere, and were later characterized by optical microscopy, Vickers microhardness, electrical resistivity, and vibrating sample magnetometry. The results revealed that the partial replacement of Sn by 3 at.% Si did not modify the dendritic microstructure and the phases present at room temperature; however, it increased the percentage of the martensite phase from 51% to 76%. This modification in the percentage of this phase is responsible for reducing the average Vickers microhardness values (from 469 HV to 459 HV), increasing the electrical resistivity (from 1.3 mΩ mm to 2.21 mΩ mm), and decreasing the saturation magnetization (from 23.67 emu/g to 19.34 emu/g), coercivity (from 5.56 Oe to 5.14 Oe), and remanent magnetization (from 0.21 emu/g to 0.18 emu/g). With this, our results bring to light a new alternative for doping the NiMnSn alloy as a way of modifying the structural and electrical properties, constituting interesting parameters for technological applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
53
Issue :
10
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
179439550
Full Text :
https://doi.org/10.1007/s11664-024-11356-7