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Preparation and loss analysis of Ge on Si SWIR optical strip waveguides.
- Source :
- Applied Physics Letters; 8/26/2024, Vol. 125 Issue 9, p1-6, 6p
- Publication Year :
- 2024
-
Abstract
- On-chip integrated photonics with operating wavelength at short-wave infrared region is becoming popular for its potential advantages in extending the telecommunication bandwidth and the application in gas sensing. As an important component of integrated optoelectronic chips, high-performance waveguides have attracted widespread attention. In this work, high-performance Ge waveguides were designed and fabricated on the Ge-on-Si platform, in which germanium films were epitaxially grown by the chemical vapor deposition process. The propagation loss for the waveguide was measured to be 2.34 dB/cm at the wavelength of 2 μm through the cut-back method. The quantitative relationship between the waveguide propagation loss and sidewall roughness as well as material defect density was established by introducing an empirical coefficient m. The m value was calculated to be 3.8 × 10<superscript>−4 </superscript>dB for the waveguide with a fixed Ge thickness of 1.5 μm by fitting the experimental propagation loss data at an operating wavelength of 2 μm. This formula provides a significant reference for future design of waveguide dimension structures, where defect induced absorption loss is non-negligible. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 125
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 179372759
- Full Text :
- https://doi.org/10.1063/5.0221709